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Observation of antiferromagnetic coupling in delta-MnGa/(Mn,Ga,As) /delta-MnGa trilayers

机译:δ-MnGa/(Mn,Ga,As)/δ-MnGa三层中反铁磁耦合的观察

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摘要

We present the magnetic properties of deltam-MnGa/(Mn,Ga,As)/deltam-MnGa trilayers. The spacer layer consists of nominally 2 to 19 monolayers (ML) GaAs, but we have indications for an important incorporation of Mn and the possible formaiton of antiferromagnetic Mn_2As. Antiferromagnetic (AFM) coupling is observed for spacer layer thicknesses of 4 to 14 ML GaAs, ferromagnetic (FM) coupling exists outside this region. The largest observed coupling field was -87.0 mT(-870 Oe) at 17 K for a sample with a 12 ML spacer layer, causing a cross-over between both branches of the hysteresis loop and a negative remanence. In oen sample (16 ML) the coupling changes from AFM at low temperature to FM at room temperature.
机译:我们介绍了deltam-MnGa /(Mn,Ga,As)/ deltam-MnGa三层的磁性。间隔层通常由2到19个单层(ML)GaAs组成,但是我们有迹象表明Mn的重要掺入和反铁磁Mn_2As的可能形成。对于间隔层厚度为4到14 ML GaAs,观察到反铁磁(AFM)耦合,在该区域之外存在铁磁(FM)耦合。对于具有12 ML间隔层的样品,在17 K下观察到的最大耦合场为-87.0 mT(-870 Oe),从而导致磁滞回线的两个分支之间的交叉和负剩磁。在其他样品(16毫升)中,耦合从低温下的AFM变为室温下的FM。

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