首页> 外文会议>Proceedings of Symposium E on Magnetic Ultra Thin Films, Multilayers and Surfaces of the 1996 E-Mrs Spring Conference Strasbourg, France, June 4-7, 1996 >Perpendicular giant magnetoresistance of Co/Cu multilayers on V-grooved substrates: dependence on deposition method
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Perpendicular giant magnetoresistance of Co/Cu multilayers on V-grooved substrates: dependence on deposition method

机译:V形沟槽衬底上Co / Cu多层膜的垂直巨磁致电阻:取决于沉积方法

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摘要

The perpendicular giant magnetoresistance of Co/Cu multialeyrs grown at an angle onto V-grooved InP substrates is studied using two different deposition techniques. Samples are grown both at ultra-high vacuum in a molecular beam epitaxy system and in a classical high vacuum electron beam evaporation system. Using the two spin-channel model for electron transport, the spin-asymmetry parameters were determined. The absolute value and temperature behavior of the spin-asymmetry parameters of the Co bulk scattering and the interface scattering are comparable for both series. We find that the interface scattering of the e-beam evaporated multilayers is relatively less spin-dependent.
机译:使用两种不同的沉积技术研究了在V形沟槽InP衬底上成一定角度生长的Co / Cu multialeyrs的垂直巨磁电阻。样品是在分子束外延系统中的超高真空和经典的高真空电子束蒸发系统中生长的。使用两个自旋通道模型进行电子传输,确定了自旋不对称参数。 Co体积散射和界面散射的自旋不对称参数的绝对值和温度行为在这两个系列中都是可比的。我们发现,电子束蒸发多层的界面散射相对较少地依赖于自旋。

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