Ion Beam and Anoid oxide induced intermixing of quantum well heterostructures for optoelectronic devices

摘要

Ion implantation and anodic oxide induced intermixing of GaAs-AlGaAs quantum wells was studied using low temperature photoluminescence (PL). Influence of various implant parameters, such as ion mass, ion dose, implant temperature, on the interdiffusion process has been studied. PL energy shifts as large as 200 meV were obtained after intermixing. Lasers with interdiffused quantum wells in the active region were fabricated and wavelength shifts as large as 40 nm were obtained. Anodic oxides of GaAs have been used to enhance interdiffusion in the quantum wells. Anodic oxide induced quantum well intermixing was also used to enhance lateral carrier confinement in quantum wire structures grown on patterned substrates.