New n~+-GaAs/#delta#(P~+)-GaInP-GaAs camel-gate hfet with high breakdown voltage and low leakage current

摘要

We report on n~+-GaAs/#delta#(P~+)-GaInP-GaAs camel-gate heterojunction field-effect transistors (HFET's) by LP-MOCVD. The active channel was tri-step doped to obtain high-barrier camel-diode. #delta#(P~+)-GaInP layer was employed to offer a high valence band offset as a hole barrier as well as an enhanced conduction band offset for a good electron confinement. A fabricated camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1X50 #mu#m~2 device.