首页> 外文会议>Proceedings of International ETG Congress 2015: Die Energiewende - Blueprints for the new energy age >Improving Power Quality by a 10 / 20 kV / 0.4 kV Voltage Regulated Distribution Transformer using Semiconductor Switching Devices
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Improving Power Quality by a 10 / 20 kV / 0.4 kV Voltage Regulated Distribution Transformer using Semiconductor Switching Devices

机译:使用半导体开关设备的10/20 kV / 0.4 kV调压配电变压器提高电能质量

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Future distribution grids will have to handle new requirements like bidirectional power flow due to distributed generation within the voltage levels and over transformation levels. One promising solution to improve power quality in such cases is the use of voltage regulated distribution transformers (VRDT). This paper summarizes technical requirements that were the basis for the development of a 10 kV-VRDT. Semiconductor switches are used to vary the voltage on LV side by switching transformer taps on the HV side of the transformer. Experiences with some 10 kV-VRDTs proved that the VRDT fulfils the requirements and prevents violations of the voltage band. This paper introduces an optimized VRDT that was developed on the basis of these experiences and that is able to handle 20 kV on the HV side as well as 10 kV.
机译:未来的配电网将不得不处理新的要求,例如由于电压水平内和转换水平以上的分布式发电而导致的双向潮流。在这种情况下提高电能质量的一种有希望的解决方案是使用调压配电变压器(VRDT)。本文总结了作为开发10 kV-VRDT的基础的技术要求。半导体开关用于通过切换变压器高压侧的变压器抽头来改变低压侧的电压。约10 kV-VRDT的经验证明,VRDT可以满足要求并防止违反电压带。本文介绍了基于这些经验而开发的优化VRDT,它能够处理HV侧的20 kV和10 kV的电压。

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