Data Signal Induced Feed-through Effects in Integrated a-Si:H Gate Driver

摘要

The data signal induced feed-through effects on dynamic performances of a-Si:H gate driver have been investigated in this paper. Simulation results show that for the dot inversion driving mode, the low level of the output voltage is raised distinctively due to the data signal fluctuations. It is thus suggested that feed-through effects induced by data signals can't be ignored, especially for taking VT shift into consideration. Although using large pulldown TFTs can suppress the feed-through effects, the power consumption increases too much. Optimization design of the circuit was studied to realize an aSi:H gate driver with stable output voltage, low power consumption and long lifetime in this work.