High Power Al-free InGaAsP quantum well Laser Diodes of 808nm wavelength

摘要

In this paper, we present a high power laser diode of 808nm wavelength with Al-free InGaAsP quantum well. For high power and narrow beam divergence, an asymmetry broad waveguide structure was used. The epilayers were grown by LP-MOCVD. We have obtained a maximum optical power of 11.6W at 10A and the vertical far field angle of 29°. After lifetime tested, Al-free InGaAsP quantum well laser diodes showed good reliability.