首页> 外文会议>Proceedings of the 31st annual conference of the North American Thermal Analysis Society(NATAS) >Thermoanalytical Characterization Of Thermoset Polymers For Chemical Mechanical Polishing
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Thermoanalytical Characterization Of Thermoset Polymers For Chemical Mechanical Polishing

机译:化学机械抛光用热固性聚合物的热分析表征

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Chemical Mechanical Polishing (CMP) has emerged as the premier technique forrnachieving both local and global planarization in sub 0.5 micron silicon integrated circuitrnmanufacturing. In a CMP process, a rotating polymer-based pad is pressed against thernmetal/oxide surface layers of a wafer. Normally, CMP occurs in the presence ofrnchemically active slurry. The removal of a polished layer and surface planarization isrnachieved due to combination of various factors, such as consumable parameters, CMPrntool design, etc., which jointly affect polishing performance. CMP process depends onrnprocess conditions, chemical interaction between slurry, pads, and polished metal layers,rneffects of heat due to mechanical friction, etc. influence. Thus, optimization of CMPrnprocess depends on optimization of the properties of CMP consumables. In turn,rnprediction and optimization of the CMP consumable properties depends on their accuraterncharacterization.rnIn this paper, several advanced analytical methods are used to analyze the thermomechanicalrnproperties of polyurethane thermoset pad under conditions similar to thosernfound during CMP processing. Two classes of CMP pads ("Soft" and "Hard” pads) werernstudied. The retention of the pad properties after exposure to deionized water and slurryrnwas monitored using Thermal Mechanical Analysis (TMA), Dynamical MechanicalrnAnalysis (DMA), Modulated Differential Scanning Calorimetry (MDSC), ThermalrnGravimetric Analysis (TGA). In addition, effects of heat treatment were investigated. Thernpads were exposed at room temperature to DI water and slurries for different timerndurations. Additionally, to simulate the effect of slurry pH on the slurry absorption andrnpad properties, some pad samples were exposed to various pH buffer solutions.rnThermal and mechanical propertie s of the pads were affected by soak in slurryrnand water. The most interesting findings are listed below:rn1. TMA results for soft pads indicated considerable shrinkage of the pads after soakrnfor four weeks in slurry and water.rn2. DMA results for soft pads showed 40% decrease of glassy modulus and 25%rndecrease of macromolecular mobility after pad soak in slurry for four weeks.rn3. MDSC results for hard pads revealed irreversible endothermic reaction in thernrange of 20℃ to 130℃. Heat of this reaction was not affected by soak in waterrnfor as long as one month; however, it increased significantly after soak in slurryrnfor two weeks.rnCorrelations between the experimental observations, pad molecular structure, and padrnperformance in CMP processes will be discussed.
机译:化学机械抛光(CMP)已成为在0.5微米以下的硅集成电路制造中实现局部和全局平面化的主要技术。在CMP工艺中,将旋转的基于聚合物的垫压在晶片的金属/氧化物表面层上。通常,CMP在化学活性浆液的存在下发生。由于各种因素的组合,如抛光参数的去除,CMPrntool设计等,会共同影响抛光性能,因此无法实现抛光层的去除和表面平坦化。 CMP工艺取决于工艺条件,浆料,抛光垫和抛光金属层之间的化学相互作用,机械摩擦产生的热量影响等。因此,CMPrnprocess的优化取决于CMP消耗品性能的优化。进而,对CMP耗材性能的预测和优化取决于其准确的表征。本文采用几种先进的分析方法来分析与CMP处理过程相似的条件下的聚氨酯热固性垫的热机械性能。研究了两类CMP垫(“软”垫和“硬”垫),使用热力学分析(TMA),动态力学分析(DMA),调制差示扫描量热法( MDSC),热重分析(TGA);此外,还研究了热处理的影响,将垫板在室温下暴露于去离子水和稀浆中以进行不同的定时研磨;此外,为了模拟稀浆pH值对稀浆吸收和稀浆垫性能的影响,垫子的热和机械性能受泥浆和水的浸泡影响,最有趣的发现如下:rn1。软垫的TMA结果表明,垫子在浸泡后会出现相当大的收缩rn2。软垫的DMA结果显示玻璃态模量降低40%,macr降低25%垫在浆液中浸泡四个星期后的分子迁移率。硬垫的MDSC结果显示在20℃至130℃的范围内发生不可逆的吸热反应。该反应的热量不受水中浸泡长达一个月的影响。然而,在浆液中浸泡两周后,其显着增加。将讨论实验观察结果,垫分子结构和CMP工艺中垫性能之间的相关性。

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