首页> 外文会议>Proceedings of 2012 21st IEEE ISAF held jointly with 11th IEEE ECAPD and IEEE PFM (ISAF/ECAPD/PFM 2012) >Influence of additives with low melting temperatures on structure, microstructure, phase transitions and dielectric properties of BiScO3-PbTiO3 ceramics
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Influence of additives with low melting temperatures on structure, microstructure, phase transitions and dielectric properties of BiScO3-PbTiO3 ceramics

机译:低熔点添加剂对BiScO3-PbTiO3陶瓷的结构,微观结构,相变和介电性能的影响

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摘要

Ceramic solid solutions on base of 0.36BiScO3 −0.64PbTiO3 compositions doped by additives Bi2O3, Ni2O3, MnO2, and LiF with low melting temperatures were prepared by the solid state reaction method. Phase formation, microstructure and dielectric properties of modified ceramics were studied. Dense single phase samples characterized by the average grain size varied from submicron till tens mm were obtained at lower temperatures. Influence of additives on dielectric properties and on the effects of dielectric relaxation was revealed.
机译:通过固相反应法制备了以0.36BiScO3 -0.64PbTiO3组成的陶瓷固溶体,该组合物掺杂有低熔点的Bi2O3,Ni2O3,MnO2和LiF添加剂。研究了改性陶瓷的相形成,微观结构和介电性能。在较低温度下获得了特征在于平均晶粒尺寸从亚微米到数十毫米不等的致密单相样品。揭示了添加剂对介电性能和介电弛豫效果的影响。

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