首页> 外文会议>Proceedings of the 11th International Conference on Fluidized Bed Technology >HYDRODYNAMIC BEHAVIOR OF AN INTERNAL CIRCULATION FLUIDIZED BED FOR PREPARING POLYSILICON GRANULES
【24h】

HYDRODYNAMIC BEHAVIOR OF AN INTERNAL CIRCULATION FLUIDIZED BED FOR PREPARING POLYSILICON GRANULES

机译:内循环流化床制备多晶硅颗粒的水动力特性

获取原文
获取原文并翻译 | 示例

摘要

The production of polysilicon granules using a fluidized bed reactor (FBR) is a promising alternative to the Siemens process for its low cost and high efficiency.The silicon deposition on the heated wall is a big issue for normal operation of FBR.An Internal Circulation Fluidized Bed (ICFB) reactor was designed to prevent silicon deposition on the heated wall by dividing the reactor into a heating zone (annulus) and a reaction zone (draft tube).In this reactor, particles are heated in the heating zone, and then circulated to the reaction zone.As the reactant gas is fed only to the reaction zone and little reactant gas flows to the heating zone, the silicon deposition on the heating wall is well suppressed.This paper aimed to experimentally study the fluidization behavior of wide-size-distribution (WSD) particles in an ICFB.The segregation of WSD particles was effectively suppressed by the circulation of particles in the ICFB.The solids holdup εs, solids circulation rate Gs, and gas bypassing fraction γRD (gas bypassing from the draft tube to annulus) and γDR (from the annulus to draft tube) were studied.When UD/Umf was 2.5~3.2 and UR/Umf was 2.2~2.7, γRD was smaller than 4%, indicating that the bypassing of reactant gas to the heating zone was well controlled.Meanwhile, the experimental and calculated results showed that the ICFB could meet the need of heat supply and effectively reduce silicon deposition on the heated wall.
机译:使用流化床反应器(FBR)生产多晶硅颗粒是西门子工艺的低成本和高效率的有希望的替代方法。加热壁上的硅沉积对于FBR的正常运行来说是一个大问题。床(ICFB)反应器的设计是通过将反应器分为加热区(环形区)和反应区(拔管)来防止硅沉积在加热的壁上。在该反应器中,颗粒在加热区中加热,然后循环由于反应气体仅进料到反应区域而很少的反应气体流入加热区域,因此可以很好地抑制硅在加热壁上的沉积。本文旨在通过实验研究大尺寸流化行为颗粒在ICFB中的分布(WSD).ICD中颗粒的循环有效地抑制了WSD颗粒的偏析。固体滞留εs,固体循环速率Gs和气体byp研究了分数比RDRD(气体从引流管到环管的旁路)和γDR(从环空到引流管)的情况。当UD / Umf为2.5〜3.2,UR / Umf为2.2〜2.7时,γRD小于4%,实验和计算结果表明,ICFB能够满足供热需求,有效减少了硅在加热壁上的沉积。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号