Electrical breakdown of rare earth oxide insulator thin films in silicon MIS structures

摘要

The present experimental results on the electrical breakdown of REO thin films of thickness 0,025 ÷ 0,23 μm show the high electrical strength of these films.rnThe stage of the critical charge accumulation in REO thin films precedes the stage of the intrinsic breakdown.rnThe observed films were demonstrated to be perspective for the device and integrated circuit application as insulator layers.