Dielectric characterization of CVD diamond thin films

摘要

The dielectric properties of diamond films deposited by CVD techniques onto p- and n- type silicon substrates have been measured in the frequency range from 0.1 to 10~3 KHz, at different temperatures. The interpretation of the data has been made on the basis of the many body theory of Dissado and Hill for the dielectric relaxation in solids. The parameters n and m calculated from this analysis have been correlated with the structure and content of the carbon phases in the films.