首页> 外文会议>Powder Metallurgy World Congress amp; Exhibition(PM 2006); 20060924-28; Busan(KR) >Effect of Post Deformation on the Structure and Properties of Sintered Al-Cu-SiC Composites
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Effect of Post Deformation on the Structure and Properties of Sintered Al-Cu-SiC Composites

机译:后变形对烧结Al-Cu-SiC复合材料结构和性能的影响

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摘要

Sintered composites of Al-8wt%Cu-10vol%SiCp were deformed by repressing or equal channel angular pressing(ECAP) at room temperature, 500℃ and 600℃. Their microstructures and transverse rupture properties were compared. Repressing produced more densification than ECAP but ECAP resulted in much higher strengths than repressing. In both cases, the transverse rupture strengths, after deformation at room temperature and 500℃, are much lower than those deformed at 600 ℃, despite of only slight differences in density. Fractured SiC particles were observed after the deformation, very frequently at room temperature, less frequently at 500℃ and rarely at 600 ℃. Some interfacial de-bonding between the matrix and SiC particles were also observed particularly in the ECAPed specimens. The higher bend strengths and less SiC fracturing at 600℃ are attributable to the presence of an Al-Cu liquid phase during deformation. ECAP at 500 ℃ and 600℃ caused recrystallization and produced very fine grain structures. Grain refinement, as well as enhanced bonding between particles due to high shear deformation associated with ECAP, is considered the major reason for the much higher strengths. The employment of copper coated SiC instead of bare SiC particles for preparing the composites was found not beneficial neither for minimizing the particle fracturing nor for improving the properties.
机译:Al-8wt%Cu-10vol%SiCp的烧结复合材料在室温,500℃和600℃下通过压制或等通道角挤压(ECAP)而变形。比较了它们的微观结构和横向断裂性能。与ECAP相比,压制产生的密度更大,但ECAP的强度比压制更高。在这两种情况下,尽管在密度和强度上只有很小的差异,但在室温和500℃下变形后的横向断裂强度都比在600℃下变形的横向断裂强度低得多。变形后观察到断裂的SiC颗粒,在室温下非常频繁,在500℃下很少见,在600℃下很少见。尤其是在ECAPed样品中,也观察到了基体和SiC颗粒之间的一些界面剥离。 600℃时较高的弯曲强度和较小的SiC断裂是由于变形过程中存在Al-Cu液相而引起的。 ECAP在500℃和600℃引起重结晶并产生非常细的晶粒结构。由于与ECAP相关的高剪切变形,晶粒细化以及颗粒之间的键合增强被认为是获得更高强度的主要原因。发现用铜涂覆的SiC代替裸露的SiC颗粒来制备复合材料既无助于最小化颗粒破裂,也无益于改善性能。

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