Fabrication of SiC:Ge: waveguide Wavelength selector using ion implantation and laser deposition techniques

摘要

A waveguide-wavelength selector was fabricated using ion implanted SiC substrate and Ga/Ge thin film using laser ablation techniques. The device was used as a CO_2 laser lines selector. The theory of the operation is based on visibility of the CO_2 laser to produce a thermal grating which drives the optical selector with maximum efficiency of 46 MHz of laser offset between 10P20 and 10P18 CO_2 laser lines. The threshold of the thermal damage of the device was overcomed using a miniature heat exchanger, which is triggered by the excess of the thermal heat during the operation. The different potential use of the device will be presented as well.