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The Impact of High Dielectric Constant on Photonic Bandgaps in PbSe Nanocrystal based Photonic Crystal Slabs

机译:高介电常数对基于PbSe纳米晶体的光子晶体平板中光子带隙的影响

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A detailed study was carried out to understand the photonic crystal design rules with very high dielectric constant (ε >13), based on plane wave expansion and finite difference time-domain (FDTD) techniques. It is found that the optimal dielectric constant contrast is indeed the one between conventional semiconductors (ε =12-14) and air. Either too high or too low contrast can lead to the reduction of complete photonic bandgap. With very high bulk dielectric constant (ε = 20-25), PbSe nanocrystal quantum dots (NQDs) are suitable for air hole based PC structure with large TE gap. On the other hand, NQD backfilled photonic crystals with tunable bandgap is proposed based on the control of packing density of NQDs inside the air holes of photonic crystal structures. Both theoretical and experimental results on the integration process are reported.
机译:基于平面波扩展和时域有限差分(FDTD)技术,进行了详细的研究,以了解具有很高介电常数(ε> 13)的光子晶体设计规则。发现最佳介电常数对比度确实是常规半导体(ε= 12-14)与空气之间的对比度。对比度太高或太低都会导致整个光子带隙的减小。 PbSe纳米晶量子点(NQDs)具有很高的体介电常数(ε= 20-25),适用于具有大TE间隙的基于气孔的PC结构。另一方面,基于对光子晶体结构气孔内NQDs的堆积密度的控制,提出了带隙可调的NQD回填光子晶体。报道了有关整合过程的理论和实验结果。

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