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Wet Etching of Sol-gel Deposited Lead Lanthanum Zirconate Titanate for Photonic Crystal Applications

机译:用于光子晶体应用的溶胶-凝胶沉积锆钛酸镧铅的湿法蚀刻

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Arrays of lead lanthanum zirconate titanate disks are fabricated on Pt electrodes by wet etching of thin films processed from sol-gel precursors, which may be applicable as defect cavities with electrically tunable resonance wavelength when embedded inside 2-D Si photonic crystals. Using e-beam lithography followed by sputtering and liftoff, Pt etch masks with diameters down to 1 urn are deposited on pyrolyzed PLZT films. Wet etching using diluted hydrochloric acid generates discrete PLZT disks with integrated top and bottom Pt electrodes. The dimensions of the PLZT disks are determined by the diameter of the Pt etch mask, although undercutting becomes a significant issue as etch mask size decreased. The effects of varying PLZT pyrolysis temperature on the etching rate and film quality after sintering are examined. Dielectric testing of wet etched PLZT film after sintering showed that the devices have short circuited, suggesting that the deformation of the top Pt electrode over the undercut PLZT during sintering may significantly hinder the applicability of the current wet etching technique. Alternate methods for the patterning of PLZT for integration into photonic crystals are proposed.
机译:通过湿蚀刻从溶胶-凝胶前体加工的薄膜,在铂电极上制造锆钛酸铅镧铅片的阵列,当将其嵌入2-D Si光子晶体内部时,可以用作具有电可调共振波长的缺陷腔。使用电子束光刻,然后进行溅射和剥离,将直径低至1 um的Pt蚀刻掩模沉积在热解PLZT膜上。使用稀盐酸进行湿法刻蚀会生成离散的PLZT圆盘,并带有集成的顶部和底部Pt电极。 PLZT磁盘的尺寸由Pt蚀刻掩模的直径决定,尽管随着蚀刻掩模尺寸的减小,底切成为一个重要的问题。考察了PLZT热解温度的变化对烧结后蚀刻速率和膜质量的影响。烧结后湿法腐蚀的PLZT膜的介电测试表明器件已短路,这表明在烧结期间底切PLZT上方的顶部Pt电极的变形可能会严重阻碍当前湿法腐蚀技术的适用性。提出了将PLZT图案化以集成到光子晶体中的替代方法。

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