The Advanced Trench HiGT with Separate Floating p-Layer for Easy Controllability and Robustness

摘要

In this paper, we propose an advanced trench HiGT (High conductivity IGBT) chip structure and showrnthe new 1700V advanced trench HiGT module characteristics. The concept of the advanced trench HiGTrnis to allow easier dV/dt control while maintaining low losses and robustness. The feature of the newrnstructure is the deep and separate floating p-layer which has less influence on the trench gate by thernfloating p-layer through the switching term, so the gate controllability is greatly improved. This new modulernexperimentally shows a 25% reduction in turn-on dV/dt with the same level losses as a conventionalrntrench HiGT. In addition, we confirmed a reduction in turn-off dV/dt, sufficiently wide SOA (SafetyrnOperation Area) and strength against type-3 short-circuits.