Improvement of gate controllability for new generation Superjunction MOSFETs : DTMOS-III series

摘要

We developed new generation 600V-class superjunction (SJ) MOSFETs: DTMOS-III series, whichrnhave high switching controllability. DTMOS-III improved the trade-off characteristics between efficiencyrnand EMI noise by the optimum combination of p-columns and MOS plane-patterns. In addition, lowrnspecific on-resistance of a top class was also realized by the optimum p-column dose and SJ lateralrnpitch narrowing.