Power MOSFET with integrated poly-silicon diode to monitor junction temperature, with simplified external electrical shutdown circuit to prevent thermal runaway

摘要

This paper studies and analyzes the integrated temperature sensor of a LV powerrnMOSFET SAFeFETTM device from STMicroelectronics (STZ150NF55T). The paper also shows arntypical example of an application where this kind of device can be considered: a fan controllerrnelectrical system. For this case, the paper suggests a design example of how achieve a devicernshutdown event if the junction temperature reaches its maximum guaranteed value. Finally, anrnevaluation of the error in the junction temperature reading under different thermal conditions isrnperformed to complete the analysis.