Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853;
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853;
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853 JSR Corporation, Semiconductor Materials Laboratory, Fine Electronic Research Laboratories, 100 Kawajiri-cho, Yokkaichi, Mie, 510-8552, Japan;
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853;
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853;
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY 14853;
机译:纳米光致抗蚀剂:配体交换作为一种新的和敏感的EUV图案化机制。
机译:纳米光致抗蚀剂:配体交换作为一种新的敏感的EUV构图机制
机译:基于锌金属氧簇的敏感EUV光致抗蚀剂的稳定性研究
机译:基于激进的基于锌的纳米粒子EUV光致抗蚀剂
机译:EUV光致抗蚀剂暴露的二次电子相互作用
机译:EUV光刻胶的分子模型揭示了链构象对线边缘粗糙度形成的影响
机译:纳米光致抗蚀剂:配体交换作为一种新的敏感的EUV图案形成机制