Application of Downstream Plasma Generated Radical Methylation Treatment to Passivate Amorphous Si Surface from TMAH Etching During Lithography Process

摘要

Relentless semiconductor device scaling relies on lithography technology advancement. Patterning films includinghardmask, anti-reflective coating (ARC) and photoresist (PR) materials continue to evolve, and more underlyingmaterials are exposed in increasingly complex 3D device structures. As a result, industry is continuously seekingsolutions to integrate new patterning films with different underlying materials and structures, and surface treatment formaterials protection plays an increasingly important role in process integration. In this paper, we present a radical basedsurface methylation process. The novel surface methylation treatment process increases surface wetting angle inpreparation of patterning film coating, and can effectively protect various sensitive underlying materials. The versatiletechnology has many potential applications in 3D device fabrication, e.g. a new adhesion promoter for ARC/PR coating.