Addressing challenges in the mitigation of stochastic effects

摘要

Towards realistic adoption of EUV technology, material/process induced defect must be considerable problem.Several excellent study have been introduced before and it mainly focused on the relation between defect numberand pattern size and pattern pitch. Unfortunately, the study related defect transfer behavior haven’t been quite few,despite defect inspection is executed through top-down SEM.In this study, latent defect on via hole pattern, especially, the behavior of invisible hole bottom area was focusedon and we tied to clarify the exist of hidden missing defect utilizing unique RIE technique in hole image transferonto under layer.