Silicon-wires and Compact Multi-mode Interference Splitters with an Uneven Splitting-ratio

摘要

We report the fabrication and accurate measurement of propagation and bending losses in silicon wires with submicron dimensions fabricated on silicon-on-insulator wafer. Propagation loss of 0.71±0.03dB/mm for the TE polarization was measured at the 1.55μm. Loss of per 90° bend is measured to be 0.01dB for a bending radius of 5μm. Three types of compact MMI splitters with different splitting-ratios were fabricated and measured. The splitting-ratios are respectively 50:50, 15:85 and 28:72. They exhibited low excess losses of about 1.5～3.9dB. The splitting-ratios were consistent with the design values.