The influence of 1/f noise on the electrical derivative initial peak of high-power semiconductor laser diodes

摘要

We report a close connection between the fluctuation characteristics of the electrical derivative (ED) initial peaks and the 1/f noise intensities of different samples we found during the investigation of the 1/f noise origins of InGaAs quantum well high-power semiconductor laser diodes (LDs). We conduct contrast measurements on over fifty samples, where the current 1/f noise is measured under different bias currents, expressed by power spectrum density (PSD) and the EDs are computed from the current-voltage (I-V) measurement results. Then the influence of 1/f noise on the ED initial peaks is presented by comparing these parameters of different samples. The results show a clear pattern between the noise intensity and the ED initial peak fluctuation, and distinct differences between functional and aged LD devices, showing that ED initial peak can also be a non-destructive testing method for high power LD cavity damage and surface defects.