Investigations on laser ablation mechanism of anti-reflection layers for solar cells

摘要

Laser processes of crystalline silicon solar cells become increasingly attractive, because they are fast, accurate and contact-free. Nanosecond and picosecond laser ablations with wavelength of 532nm were performed on the anti-reflection layers deposited on silicon. The laser ablated grooves of AR coatings on monocrystalhne and polycrystalline silicon were both characterized to verify the influence on the underlying silicon. And the threshold fluences were specified by contrasting with the corresponding performances under certain laser pulse duration. More importantly, the groove edges were analyzed to further expose the laser ablation mechanism under different laser pulse durations.