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X-ray imaging sensor arrays on foil using solution processed organic photodiodes and organic transistors

机译:使用溶液处理的有机光电二极管和有机晶体管的箔上X射线成像传感器阵列

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We demonstrate organic imaging sensor arrays fabricated on flexible plastic foil with the solution processing route for both photodiodes and thin film transistors. We used the photovoltaic P3HT:PCBM blend for fabricating the photodiodes using spin coating and pentacene as semiconductor material for the TFTs. Photodiodes fabricated with P3HT:PCBM absorb in the green part of the visible spectrum which matches with the typical scintillator output wavelength. The arrays consist of 32×32 pixels with variation in pixel resolution of 200μm×200μm, 300μm×300μm and of 1mm×1mm. The accurate reproducibility of shadow images of the objects demonstrates the potential of these arrays for imaging purposes. We also demonstrate that the crosstalk is relatively insignificant despite the fact that the active photodiode forms a continuous layer in the array. Since both photodiodes and TFTs are made of organic material, they are processed at low temperatures below 150℃ on foil which means that these imaging sensors can be flexible, light weight and low cost when compared to conventional amorphous silicon based imaging sensors on rigid substrates. In combination with a scintillator on top of the arrays, we show the potential of these arrays for the X-ray imaging applications.
机译:我们演示了在柔性塑料箔上制造的有机成像传感器阵列,以及光电二极管和薄膜晶体管的溶液处理路线。我们使用光伏P3HT:PCBM共混物通过旋涂和并五苯作为TFT的半导体材料来制造光电二极管。用P3HT:PCBM制造的光电二极管吸收可见光谱的绿色部分,该部分与典型的闪烁体输出波长匹配。该阵列由32×32个像素组成,像素分辨率的变化为200μm×200μm,300μm×300μm和1mm×1mm。物体阴影图像的精确再现性证明了这些阵列在成像方面的潜力。我们还证明,尽管有源光电二极管在阵列中形成连续层,但串扰相对较小。由于光电二极管和TFT均由有机材料制成,因此它们在箔片上于150℃以下的低温下进行处理,这意味着与刚性基板上传统的基于非晶硅的成像传感器相比,这些成像传感器可以灵活,轻巧且成本低廉。结合在阵列顶部的闪烁器,我们展示了这些阵列在X射线成像应用中的潜力。

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