Asahi-KASEI Corporation, 2-1 Samejima, Fuji, Shizuoka, 416-8501, JAPAN;
rnAsahi-KASEI Corporation, 2-1 Samejima, Fuji, Shizuoka, 416-8501, JAPAN;
rnAsahi-KASEI Corporation, 2-1 Samejima, Fuji, Shizuoka, 416-8501, JAPAN;
rnAsahi-KASEI Corporation, 2-1 Samejima, Fuji, Shizuoka, 416-8501, JAPAN;
rnAsahi-KASEI Corporation, 2-1 Samejima, Fuji, Shizuoka, 416-8501, JAPAN;
rnAsahi-KASEI Corporation, 2-1 Samejima, Fuji, Shizuoka, 416-8501, JAPAN;
rnAsahi-KASEI Corporation, 2-1 Samejima, Fuji, Shizuoka, 416-8501, JAPAN;
rnIMCE Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka, 812-8581, JAPAN;
rnIMCE Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka, 812-8581, JAPAN;
organic semiconductor; pentacene derivative; thin-film transistor; crystal structure;
机译:并五苯多晶型物的温度分辨光谱:单晶和界面控制薄膜中人字形角的变化
机译:并五苯多晶薄膜上修饰层诱导的微观结构转变及其对有机薄膜晶体管性能的影响
机译:分子结构和微观结构对多并五苯薄膜晶体管器件性能的影响
机译:人字形结构化薄膜的烷基取代的五苯磺酸和FET性能
机译:在金属表面上生长的并五苯薄膜的人字形和π堆积相。
机译:F4TCNQ掺杂的并五苯中间层对基于顶部接触并五苯的有机薄膜晶体管性能改善的影响
机译:F4TCNQ掺杂的并五苯中间层对顶部接触并五苯有机薄膜晶体管性能改善的影响