首页> 外文会议>Organic Field-Effect Transistors VI; Proceedings of SPIE-The International Society for Optical Engineering; vol.6658 >Organic field-effect transistors with solution-processible thiophene/phenylene based-oligomer derivative films
【24h】

Organic field-effect transistors with solution-processible thiophene/phenylene based-oligomer derivative films

机译:具有溶液可加工的噻吩/亚苯基低聚物衍生物薄膜的有机场效应晶体管

获取原文
获取原文并翻译 | 示例

摘要

Solution-processible thiophene/phenylene -based oligomer derivatives with different end substituents are presented as p-type semiconducting materials in OFETs. These films were deposited on OTS-treated SiO_2/Si or polymeric bivinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB)/ITO/quartz substrates, via drop-casting and spin-casting. Synchrotron-based grazing-incidence X-ray diffraction and atomic force microscopy reveals that both drop- and spin-cast films have highly crystalline structures with edge-on molecules and parallel π-π stacking conjugated planes with respect to the substrate. In particular, temperature-dependent solubility of these materials can give a strategy for highly ordered crystalline structure in spin-cast films grown on cooler substrates, when compared to warmed solutions. Field-effect mobilities of these spin-cast films in a top-contacted electrode OFETs with BCB dielectrics are reached as high as ~0.01 cm~2/Vs.
机译:具有不同末端取代基的可溶液加工的噻吩/亚苯基低聚物衍生物作为OFET中的p型半导体材料出现。这些膜通过滴铸和旋转浇铸沉积在OTS处理的SiO_2 / Si或聚合的二乙烯基四甲基二硅氧烷-双(苯并环丁烯)(BCB)/ ITO /石英衬底上。基于同步加速器的掠入射X射线衍射和原子力显微镜显示,滴铸膜和旋铸膜都具有高度结晶的结构,具有边缘上分子和相对于基板平行的π-π堆叠共轭面。特别地,与温热的溶液相比,这些材料的温度依赖性溶解度可以为在较冷的基板上生长的旋转浇铸薄膜提供高度有序的晶体结构的策略。在带有BCB电介质的顶部接触电极OFET中,这些自旋铸膜的场效应迁移率高达〜0.01 cm〜2 / Vs。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号