Renesas Yamagata Semiconductor Co., Ltd;
Renesas Electronics Corporation 1120, Shimokuzawa, Chuou-Ku, Sagamihara, Kanagawa 252-5298, Japan;
Renesas Electronics Corporation 1120, Shimokuzawa, Chuou-Ku, Sagamihara, Kanagawa 252-5298, Japan;
Renesas Electronics Corporation 1120, Shimokuzawa, Chuou-Ku, Sagamihara, Kanagawa 252-5298, Japan;
Renesas Electronics Corporation 1120, Shimokuzawa, Chuou-Ku, Sagamihara, Kanagawa 252-5298, Japan;
Renesas Electronics Corporation 1120, Shimokuzawa, Chuou-Ku, Sagamihara, Kanagawa 252-5298, Japan;
flare; density; PSF; immersion; dose; control; 40 nm; active;
机译:高效的SAR ADC,具有优化的时序再分配异步SAR逻辑,在40-NM CMOS中
机译:逻辑处理兼容的40-nm 16-Mb,嵌入式垂直MRAM,带有混合电阻参考,子
机译:逻辑过程兼容40nm 16-mb,嵌入式垂直-mram,具有混合电阻参考,子
机译:40 nm逻辑器件的耀斑管理
机译:基于自旋电子和忆阻器件的非对称逻辑函数的新型逻辑综合技术
机译:氧化镧Ga:CMOS逻辑和存储设备的新型电子设备材料
机译:复杂可编程逻辑设备与数字逻辑设计课程介绍的集成
机译:所选智能像素的回顾:自电光效应器件,surfaceEmitting激光逻辑器件,双异质结构光电开关,二极管激光逻辑,淬火激光光学门