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Pixel-based inverse lithography using a mask filtering technique

机译:使用掩膜滤波技术的基于像素的反光刻

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In this paper, we propose a new regularization framework that regularizes mask directly by applying a mask filtering technique to improve computational efficiency and enhance mask manufacturability for pixel-based Inverse Lithography Technique (ILT). Generally, the synthesized mask by pixel-based ILT is a grey-level image, and possesses small, unwanted block objects, such as isolated holes, protrusions, and jagged edges, which are unreachable in the real manufacturing process. The proposed method filters (or regularizes) mask directly to guarantee manufacturability of the synthesized mask pattern; this technique is different from the conventional regularization method that regularizes mask by incorporating various penalty functions to a cost function. A tailored mask filter is developed in this special ILT case. In addition, we introduce a new metric, edge distance error which has the same dimension nanometer as edge placement error and has a continuous expression as pattern error, to guide mask synthesis. Simulation results demonstrating the validity and efficiency of the proposed method are presented.
机译:在本文中,我们提出了一种新的正则化框架,该框架可通过应用蒙版滤波技术直接对蒙版进行正则化,以提高计算效率并增强基于像素的反光刻技术(ILT)的蒙版可制造性。通常,通过基于像素的ILT合成的蒙版是灰度图像,并且具有小的,不需要的块对象,例如孤立的孔,突起和锯齿状的边缘,这些在实际制造过程中是无法达到的。所提出的方法直接过滤(或调整)掩模以保证合成掩模图案的可制造性。此技术不同于通过将各种惩罚函数合并到成本函数来对掩码进行正则化的常规正则化方法。在这种特殊的ILT情况下,将开发量身定制的面罩滤光片。此外,我们引入了一种新的度量,即边缘距离误差,该误差与边缘放置误差具有相同的尺寸纳米,并且具有作为图案误差的连续表达式,以指导掩模合成。仿真结果证明了该方法的有效性和有效性。

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