Near-infrared (1- to 3-um) InGaAs detectors and arrays: crystal growth leakage current and reliability

摘要

Abstract: The hydride vapor phase epitaxy (VPE) technique was used to grow In$-x$/Ga$-1$MIN@x$/As/InAs$-y$/P$-1$MIN@y$/ detectors optimized for 1.8 $mu@m (x $EQ 0.58, y $EQ 0.08), 2.2 $mu@m (x $EQ 0.71, y $EQ 0.36), and 2.6 $mu@m (x $EQ 0.82, y $EQ 0.60) using several compositional grading techniques and several doping levels in the heteroepitaxial layers. Additionally, 1.7 $mu@m In$-0.53$/Ga$-0.47$/As detectors were grown on GaAs and Si substrates to study the possibility of fabricating a monolithic linear InGaAs array. Single element detectors with 75 and 500 $mu@m diameter, and 256 and 512 element detector arrays of (25 $MUL 500) $mu@m pixel sizes were fabricated. The best results include a room temperature leakage current of 500 pA at 10 mV back bias for a 2.2 $mu@m cutoff, (25 $MUL 500) $mu@m array pixel. High reliability (12,000 hours at 125$DGR@C) has been observed for both In$-x$/Ga$-1$MIN@x$/As/InAs$-y$/P$-1$MIN@y$/ and graded In$-0.53$/Ga$-0.47$/As detector structures grown on GaAs and Si substrates. The relationship between dislocation density, leakage current, and reliability is also discussed. !21