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Problems in using diode arrays for open path DOAS measurements of atmospheric species

机译:使用二极管阵列进行大气物种的开放路径DOAS测量时的问题

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Abstract: The `multiplex advantage' of diode array detectors over optomechanical spectral scanning devices promises to improve DOAS instruments by reducing measurement time about two orders of magnitude. Alternatively the signal to noise ratio can be improved by adding several scans. Unfortunately, the use of diode arrays gives rise to new problems. Two thin layers on the semiconductor (the protective SiO$-2$/ layer plus deposits of vapor) produce spectral interference structures and a thermal recombination current in the diode junction is superimposed to the light signal. Interferences in the protective layer of the diode array impose spectral structures, which are subjected to slow changes due to deposition of vapor upon the diode array and rapid changes caused by varying illumination of the array due to air turbulence in the light path. Detailed model calculations reproduce the etalon structure measured in the laboratory by assuming the existence of a layer of SiO$-2$/ (index of refraction n $APEQ 1.6) and a second layer with n $APEQ 1.3 (probably ice). A model considering the geometry of the spectrograph detector system is presented, which describes the influence of changing illumination of the diodes (i.e., caused by atmospheric turbulence) on the etalon structure. The dark current can, in principle, be reduced by cooling the diode array. However, low temperatures increase the complexity of the detector and enhance deposition of vapor, aggravating the etalon problem. The dark current, depending on the charge of the diode, is a complex function of light intensity and exposure time. Thus, subtracting the signal of the darkened diode array to remove the dark current signal leads to apparent nonlinearities. A model for the behavior of the dark current is presented, which allows the use of diode arrays without extensive cooling. !6
机译:摘要:二极管阵列检测器相对于光机械光谱扫描设备的“多重优势”有望通过将测量时间缩短约两个数量级来改善DOAS仪器。或者,可以通过添加几次扫描来提高信噪比。不幸的是,二极管阵列的使用引起了新的问题。半导体上的两个薄层(保护性SiO $ -2 //加上蒸汽沉积物)产生光谱干涉结构,二极管结中的热复合电流叠加到光信号上。二极管阵列的保护层中的干扰强加了光谱结构,该光谱结构由于蒸气在二极管阵列上的沉积而受到缓慢的变化,并且由于光路中的空气湍流而由于阵列的照明变化而引起的快速变化。详细的模型计算通过假设存在一层SiO $ -2 $ /(折射率n $ APEQ 1.6)和第二层n $ APEQ 1.3(可能是冰)来再现在实验室中测量的标准具结构。提出了一种考虑光谱探测器系统几何形状的模型,该模型描述了二极管照明变化(即,由大气湍流引起)对标准具结构的影响。暗电流原则上可以通过冷却二极管阵列来减少。然而,低温增加了检测器的复杂性并增加了蒸气的沉积,加剧了标准具问题。暗电流取决于二极管的电荷,是光强度和曝光时间的复杂函数。因此,减去变暗的二极管阵列的信号以去除暗电流信号导致明显的非线性。提出了暗电流行为的模型,该模型允许在不进行大量冷却的情况下使用二极管阵列。 !6

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