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Broadband photosensor with a tunable frequency range, built on the basis of nanoscale carbon structure with field localization

机译:具有可调谐频率范围的宽带光电传感器,基于具有场域定位的纳米级碳结构构建

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The work is devoted to the development of a new direction in creating of broadband photo sensors which distinctive feature is the possibility of dynamic adjustment of operating frequency range. The author's results of study of red threshold control of classic photoelectric effect were the basis for the work implementation. This effect was predicted theoretically and observed experimentally during irradiation of nanoscale carbon structure of planar-edge type by stream of low-energy photons. The variation of the accelerating voltage within a small range allows you to change photoelectric threshold for carbon in a wide range - from UV to IR. This is the consequence of the localization of electrostatic field at tip of the blade planar structure and of changes in the conditions of non-equilibrium electrons tunneling from the boundary surface of the cathode into the vacuum. The generation of nonequilibrium electrons in the carbon film thickness of 20 nm has a high speed which provides high performance of photodetector. The features of the use of nanoscale carbon structure photocurrent registration as in the prethreshold regime, and in the mode of field emission existence are discussed. The results of simulation and experimental examination of photosensor samples are given. It is shown that the observed effect is a single-photon tunneling. This in combination with the possibility of highspeed dynamic tuning determines the good perspectives for creation of new devices working in the mode of select multiple operating spectral bands for the signal recording. The architecture of such devices is expected to be significantly simpler than the conventional ones, based on the use of tunable filters.
机译:这项工作致力于开发宽带光电传感器的新方向,其独特之处在于可以动态调整工作频率范围。作者对经典光电效应红色阈值控制的研究结果是该工作实现的基础。在低能光子流照射平面边缘型纳米碳结构的过程中,从理论上预测了这一效应,并在实验中观察到了这一效应。小范围内的加速电压变化使您可以在从UV到IR的大范围内更改碳的光电阈值。这是静电场在叶片平面结构尖端处的局限性以及非平衡电子从阴极边界表面隧穿到真空中的条件变化的结果。碳膜厚度为20 nm的非平衡电子的产生具有高速度,这提供了光电探测器的高性能。讨论了使用纳米碳结构光电流配准的特征,如阈值前状态和场发射存在模式。给出了光电传感器样品的仿真和实验检查结果。结果表明,观察到的效应是单光子隧穿。这与高速动态调谐的可能性相结合,为创建工作在选择多个工作频谱带以进行信号记录的模式下的新设备的创建奠定了良好的前景。基于可调谐滤波器的使用,预计此类设备的体系结构将比传统设备显着简化。

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