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Development of Broad Spectral Bandwidth Hybrid QW/QD Structures from 1000-1400 nm

机译:1000-1400 nm宽光谱带宽混合QW / QD结构的开发

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摘要

We describe the development of hybrid quantum well (QW)/quantum dot (QD) active elements to achieve broad spectral bandwidth spontaneous emission and gain. We have previously reported that the placement of the QW within the active element is a critical factor in obtaining broad spectral bandwidth emission. We now present new designs to further broaden the spontaneous emission from hybrid structures by increasing the number of QD layers and dot density, and by using QDs with wider state-separation. Introducing chirped QD layers reduced the modulation in the spontaneous emission spectra, and by utilising self-heating effects and state-filling, a spontaneous emission with 3dB line-width of 350nm is obtained.
机译:我们描述了混合量子阱(QW)/量子点(QD)有源元件的发展,以实现宽光谱带宽的自发发射和增益。我们以前曾报道过,将QW放置在有源元件中是获得宽光谱带宽发射的关键因素。现在,我们提出了新的设计,通过增加QD层的数量和点密度以及使用具有更宽状态分离的QD来进一步拓宽混合结构的自发发射。引入chi形QD层可降低自发发射光谱中的调制,并且通过利用自热效应和状态填充,可获得3dB线宽为350nm的自发发射。

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  • 来源
    《Novel in-plane semiconductor lasers XIII》|2014年|900204.1-900204.6|共6页
  • 会议地点 San Francisco CA(US)
  • 作者单位

    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;

    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;

    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;

    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK, EPSRC National Centre for Ⅲ-Ⅴ Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;

    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;

    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK, EPSRC National Centre for Ⅲ-Ⅴ Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;

    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;

    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;

    EPSRC National Centre for Ⅲ-Ⅴ Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;

    Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;

    QD Laser Inc., Keihin Bldg. 1F, 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki, Kanagawa 210-0855, JAPAN;

    QD Laser Inc., Keihin Bldg. 1F, 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki, Kanagawa 210-0855, JAPAN;

    QD Laser Inc., Keihin Bldg. 1F, 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki, Kanagawa 210-0855, JAPAN;

    QD Laser Inc., Keihin Bldg. 1F, 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki, Kanagawa 210-0855, JAPAN;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Quantum well; quantum dot; broad bandwidth; optical coherence tomography;

    机译:量子阱;量子点宽带宽;光学相干断层扫描;

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