Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK, EPSRC National Centre for Ⅲ-Ⅴ Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK, EPSRC National Centre for Ⅲ-Ⅴ Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;
EPSRC National Centre for Ⅲ-Ⅴ Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, UK;
QD Laser Inc., Keihin Bldg. 1F, 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki, Kanagawa 210-0855, JAPAN;
QD Laser Inc., Keihin Bldg. 1F, 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki, Kanagawa 210-0855, JAPAN;
QD Laser Inc., Keihin Bldg. 1F, 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki, Kanagawa 210-0855, JAPAN;
QD Laser Inc., Keihin Bldg. 1F, 1-1 Minamiwataridacho, Kawasaki-ku, Kawasaki, Kanagawa 210-0855, JAPAN;
Quantum well; quantum dot; broad bandwidth; optical coherence tomography;
机译:通过增加GaN屏障厚度提高QD / QW混合结构的内部量子效率
机译:宽光谱带宽发射器的混合量子阱/量子点结构
机译:MOVPE生长的InGaAsN / GaAs QD和QW结构
机译:混合QW / QD结构产生的宽带宽发射
机译:利用新技术开发Doherty放大器以实现宽带宽和高效率。
机译:通过使用混合量子阱/量子点结构的具有290nm发射带宽的基于GaAs的超发光发光二极管
机译:通过增加GaN屏障厚度提高QD / QW混合结构的内部量子效率
机译:飞秒电子束中宽带太赫兹脉冲光谱包络的单次测量。