Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany, Department of Microsystems Engineering (IMTEK), University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg, Germany;
GaN; laser diode; multi-section laser diode; absorption; self-Q-switching; Franz-Keldysh effect;
机译:激光源对激光剥离GaN基发光二极管反向偏置泄漏的影响
机译:带结构和吸收器动力学对高反向偏置的GaN基多节激光二极管自调Q的影响
机译:激光剥离GaN基发光二极管中反向偏置泄漏电流增加的微观分析
机译:激光源对激光剥离GaN基LED结构损伤机理和反向偏置泄漏的影响
机译:使用可调二极管激光吸收光谱法研究二极管泵浦碱金属激光的大气传输。
机译:激光发射前GaN基激光二极管效率下垂现象的研究
机译:激光二极管直接泵浦的5 kW近衍射极限和8 kW高亮度单片连续波光纤激光器
机译:用可调谐二极管激光吸收光谱研究二极管泵浦碱激光大气传输。