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Measurement of thermal lensing in GaAs induced by 100-W Tm:fier laser

机译:100W Tm:激光在GaAs中产生热透镜的测量

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We present the characterization of thermal distortion induced in bulk and orientation-patterned GaAs samples by a 100 W narrow linewidth, linearly polarized CW Tm:fiber laser focused to ~150 μm diameter. For a 500-μm thick bulk GaAs sample, the induced thermal distortion is measured using a probe laser beam at 1080 nm and a Shack-Hartmann wavefront sensor (SHWS). We also compare the power dependent induced divergence for 500-μm thick bulk GaAs and 10-mm thick orientation-partnered GaAs (OP-GaAs) samples as they are translated axially through the focus of a 2-μm wavelength Tm:fiber laser beam.
机译:我们介绍了通过100 W窄线宽,线偏振CW Tm:光纤激光器聚焦到〜150μm直径而在块状和取向图案的GaAs样品中引起的热变形的特性。对于厚度为500μm的块状GaAs样品,使用1080 nm的探测激光束和Shack-Hartmann波前传感器(SHWS)测量引起的热变形。我们还比较了500μm厚的块状GaAs和10mm取向定向的GaAs(OP-GaAs)样品的功率依赖性感应散度,这些样品通过2μm波长Tm:光纤激光束的焦点轴向移动。

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