Non-Langevin recombination in disordered dielectrics

摘要

Summary form only given. Negative transient RIC (radiation-inducednconductivity) in short-circuited samples and nonmonotonic increase ofnradiation-induced space-charge density have recently been observed fornpolymers (low-density polyethylene, polytetrafluoroethylene) andninorganic dielectrics (MgO, CaF₂, AlN, LiNiO₃).nThese experimental data are analyzed, and it is shown that such anbehavior of RIC and space-charge density can be caused by non-Langevinnrecombination with the recombination constant R smaller thannthe Langevin value R_o. Possible mechanisms ofnrecombination rate reduction have been considered