Photoelectric and dielectric spectroscopy study of PZT thin film electronic structure

摘要

Electronic structure of ferroelectric thin films, characterized by electric potential and conductivity distribution through the film thickness, and the presence and the location of trap levels in a band gap influences appreciably the exploiting parameters and reliability of various ferroelectric thin-film devices including capacitors, piezo-, pyro-, electro- and acusto-optic- devices, memories etc. [1].