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ZERO-BIAS CONDUCTANCE THROUGH SIDE-COUPLED DOUBLE QUANTUM DOTS

机译:通过侧耦合双量子点实现零偏置电导

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摘要

Low temperature zero-bias conductance through two side-coupled quantum dots is investigated using Wilson's numerical renormalization group technique. A low-temperature phase diagram is computed. Near the particle-hole symmetric point localized electrons form a spin-singlet associated with weak conductance. For weak inter-dot coupling we find enhanced conductance due to the two-stage Kondo effect when two electrons occupy quantum dots . When quantum dots are populated with a single electron, the system enters the Kondo regime with enhanced conductance. Analytical expressions for the width of the Kondo regime and the Kondo temperature in this regime are given.
机译:使用威尔逊数值重归一化群技术研究了通过两个侧耦合量子点的低温零偏置电导。计算出低温相图。在粒子孔对称点附近,局部电子形成与弱电导相关的自旋单峰。对于弱点间耦合,当两个电子占据量子点时,由于两阶段近藤效应,我们发现电导增强。当量子点被单个电子填充时,系统以增强的电导率进入近藤状态。给出了近藤区宽度和该状态下近藤温度的解析表达式。

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