TRANSPORT PROPERTIES OF FULLERENE NANODEVICES: TOWARD THE NEW RESEARCH FIELD OF ORGANIC ELECTRONIC DEVICES

摘要

We report transport properties of C_(60) thin film field-effect transistors (FETs) with a channel length of several-ten nanometers. Nonlinear drain current I_D versus source-drain voltage V_(DS) characteristics were observed at room temperature. We discuss this phenomenon in terms of the crossover from a diffusive conductance in bulk regime to a coherent one in the nanometer scale.