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Metal oxides as functional semiconductors. An inkjet approach

机译:金属氧化物作为功能半导体。喷墨方式

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摘要

Inkjet printing provides an interesting technology for electronic devices, as it is a versatile minimum-waste cost-effective technique for direct writing on almost every surface without need of masks or sacrificial layers. Among the fields in which it has been tested, transparent and flexible electronics offer a variety of applications ranging from large-area roll-to-roll (such as OLEDs for lighting or solar cells) to small low-consumption biocompatible devices such as biosensors. This work aims to present some advances in the field of semiconductors synthesized by sol-gel and patterned by inkjet printing. Chemical routes are used to obtain suitable inks, based on salts of Ga, In, Zn, Cu and Sn and solvents as methoxyethanol. Inkjet printing provides thin layers 20-300nm thick, with morphology strongly depending on the materials. Different thermal treatments are tested, and some chemical and optical characterization of the obtained layers allows optimizing the technology for each material. The effectiveness of the inks and the technique is demonstrated by the electronic behavior of thin-film transistors fabricated by the proposed technology. The different devices are compared, suggesting the properties of the different materials analyzed, as a step ahead in the development of a complete logic for such promising applications of the flexible electronics.
机译:喷墨打印为电子设备提供了一种有趣的技术,因为它是一种通用的,浪费最少的具有成本效益的技术,可以在几乎每个表面上直接书写而无需使用遮罩或牺牲层。在经过测试的领域中,透明且灵活的电子产品可提供各种应用,从大面积卷对卷(例如用于照明或太阳能电池的OLED)到小型低消耗生物兼容设备(例如生物传感器)。这项工作旨在介绍通过溶胶凝胶合成并通过喷墨印刷进行图案化的半导体领域的一些进展。基于Ga,In,Zn,Cu和Sn的盐和溶剂(如甲氧基乙醇),化学路线可用于获得合适的油墨。喷墨打印可提供20-300nm厚的薄层,其形态在很大程度上取决于材料。测试了不同的热处理,对获得的层进行了一些化学和光学表征,可以优化每种材料的技术。通过所提出的技术制造的薄膜晶体管的电子行为证明了油墨和该技术的有效性。比较了不同的器件,表明了所分析的不同材料的特性,这是为柔性电子产品的这种有前途的应用开发完整逻辑的第一步。

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  • 会议地点 San Francisco CA(US)
  • 作者单位

    M2E-IN2UB, Electronics Department, Marti i Franques 1, 08028-Barcelona, Spain;

    M2E-IN2UB, Electronics Department, Marti i Franques 1, 08028-Barcelona, Spain;

    M2E-IN2UB, Electronics Department, Marti i Franques 1, 08028-Barcelona, Spain;

    M2E-IN2UB, Electronics Department, Marti i Franques 1, 08028-Barcelona, Spain;

    M2E-IN2UB, Electronics Department, Marti i Franques 1, 08028-Barcelona, Spain,Institute for Research on Energy of Catalonia, Jardins de les Dones de Negre 1, 08930-Sant Adria de Besos, Spain;

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  • 正文语种 eng
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