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Nanosized Silicon Carbide Obtained from Rice Husks

机译:从稻壳获得的纳米碳化硅

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摘要

Two ways to obtain nanosized silicon carbide (SiC) powders from the products of thermal decomposition of rice hulls and posterior thermal and chemical treatment of SiO_2-C precursors are shown in the present paper. The reagents and products were analyzed using BET, DTA, IR, XRD and SEM/TEM. Precursors obtained from rice husks containing pure SiO_2 and a controlled SiO_2-C ratio were used for the synthesis of SiC. The synthesis of SiC proceeded for 30-45 min in a graphite heater furnace under protective Ar atmosphere at relatively low temperatures (1450℃-1550℃). Nanosized dimensions of reagents obtained from rice husks and their high activity allow obtaining SiC in relatively milder thermal regimes. TEM and XRD analysis revealed synthesis of nanostructured mainly P-SiC with a mean crystallite size of 40-100 nm. Due to their purity and nano-scale properties, the products obtained are appropriate for production of bulk SiC or design of SiC-based ultra high-temperature materials using the methods of powder metallurgy.
机译:本文介绍了两种方法,分别从稻壳的热分解产物和SiO_2-C前体的后热处理和化学处理产物获得纳米碳化硅(SiC)粉末。使用BET,DTA,IR,XRD和SEM / TEM分析试剂和产物。从含有纯SiO_2和受控的SiO_2-C比的稻壳获得的前体被用于合成SiC。在保护性的Ar气氛下,在相对较低的温度(1450℃-1550℃)下,在石墨加热器炉中SiC的合成进行了30-45分钟。从稻壳获得的试剂的纳米尺寸及其高活性可以在相对温和的热态下获得SiC。 TEM和XRD分析表明,合成了主要为P-SiC的纳米结构,平均晶粒尺寸为40-100 nm。由于其纯度和纳米级性能,所获得的产品适用于散装SiC的生产或采用粉末冶金方法设计SiC基超高温材料。

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