首页> 外文会议>Nanostructure Integration Techniques for Manufacturable Devices, Circuits, and Systems: Interfaces, Interconnects, and Nanosystems >Recent Developments and Current Challenges in Interfacing and Integrating 1D Semiconductor Nanowires in Devices and Circuits
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Recent Developments and Current Challenges in Interfacing and Integrating 1D Semiconductor Nanowires in Devices and Circuits

机译:在设备和电路中接口和集成一维半导体纳米线的最新发展和当前挑战

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摘要

In the past few years, exciting developments in the synthesis and novel device demonstration of one-directional (1D) semiconductor nanowires have given rise to an enormous optimism. Interesting characteristics such as high surface to volume ratio, quantum confinement, and simple and low cost synthesis process are opening new frontiers in novel electronic and photonic devices. One much debated issue of interfacing and integrating such nano-structures in a massively large number of devices and systems has attracted the attention of research groups all over the world and various approaches were proposed. This talk will give an overview of the recent progress and future challenges in the construction of large and complex systems with 1D semiconductor nanowires.
机译:在过去的几年中,单向(1D)半导体纳米线的合成和新颖的器件演示中令人振奋的发展引起了极大的乐观。诸如高的表面体积比,量子限制以及简单且低成本的合成工艺等有趣的特征正在新颖的电子和光子器件中开辟新的领域。在大量的设备和系统中连接和集成此类纳米结构的一个备受争议的问题引起了全世界研究小组的关注,并提出了各种方法。本演讲将概述使用一维半导体纳米线构建大型复杂系统的最新进展和未来挑战。

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