Research Center for Integrated Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan;
Research Center for Integrated Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan;
Research Center for Integrated Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan;
Research Center for Integrated Quantum Electronics, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan;
Selective-Area Growth; MOVPE; Ferromagnetic Nanoclusters; Semiconducting Nanowires;
机译:半导体GaAs纳米线与铁磁MnAs纳米团簇之间混合结构的选择性区域生长和电学表征
机译:在垂直MnAs / InAs异质结纳米线中表现出磁化转换的铁磁MnAs纳米团簇的形状控制
机译:垂直铁磁MnAs /半导体InAs异质结纳米线的合成与结构表征
机译:Ⅲ-ⅤⅤ半导体纳米线模板中铁磁性MNAS纳米能器形成的差异
机译:垂直铁磁MnAs /半导体InAs异质结纳米线的合成与表征
机译:通过导入含有PUR1的BUF / MNA大鼠的染色体区域对ACI / MNA大鼠的肾脏畸形的先天性差异
机译:金属有机气相外延在GaInAs ∕ InP(111)B层上形成六方铁磁MnAs纳米簇
机译:结构和磁性在Gaas中通过mn离子注入形成的mnas纳米团簇