Emerging Materials Research Laboratory, Mississippi State Univ, Mississippi State University, Mississippi State, MS 39762;
Emerging Materials Research Laboratory, Mississippi State Univ, Mississippi State University, Mississippi State, MS 39762;
Emerging Materials Research Laboratory, Mississippi State Univ, Mississippi State University, Mississippi State, MS 39762;
National Institute of Standards and Technology, Gaithersburg, Maryland 20899;
Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, United States;
National Institute of Standards and Technology, Gaithersburg, Maryland 20899;
silicon carbide; SiC; nanowires; epitaxial growth; chemical vapor deposition; CVD;
机译:4H-SiC衬底上生长的SiC纳米线中与衬底有关的取向和多型性控制
机译:用于恶劣环境MEMS应用的氮掺杂多晶3C-SiC薄膜的生长和表征
机译:SiC多型外延生长过程的分层生长建模
机译:SiC纳米线外延生长中的取向,对准和聚贸易控制在恶劣环境中的电子应用
机译:电子应用硅上外延3C-SiC薄膜的生长和表征。
机译:可调谐的磁性纳米线用于生物医学和恶劣环境应用
机译:针对恶劣环境应用的新型混合Si / SiC功率器件的仿真