In-situ chlorine passivation to suppress surface-dominant transport insilicon nanowire devices

摘要

We demonstrate a post-growth in-situ chlorine passivation for suppressing surface-dominant transport in Si nanowires (SiNWs). The leakage current of bridged SiNWs suppressed more than five orders of magnitude as a result of chlorine passivation while the shape and structural properties of the bridging NWs remain unaffected by the post-growth in-situ HC1 passivation. The chlorine passivated SiNW surfaces were found to be beneficial to enhance the high immunity to environmental degradation.