Modeling and characterization of a smart two-directions MOSFET magnetic sensor

摘要

D.C. and A. C. characteristics of a magnetic sensor, based on Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure, have been investigated using an efficient two-dimensional physical simulator. With the coupling scheme between the magnetic field equation and the carrier transport equations in the present simulator, the effects of the device geometric parameters, the bias conditions, and the magnetic field on the current deflection due to magnetic field and on the magnetic sensor relative sensitivity are accurately determined. The MOSFET magnetic sensor capability is further enhanced by using an integrated smart structure which is able to fully detect the magnetic field variations in two-directions. The current deflection and relative sensitivity for the smart two-directions magnetic sensor under different operating conditions are finally investigated with the present efficient physical simulator.