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Compact Act modeling of OTFTs bias dependent capacitance

机译:OTFT的偏置法电容相关紧凑模型

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We have presented compact OTFT charge and capacitance models, with analytical expressions for the terminal charges and transcapacitances. The models are physically-based and consistent with the channel current model previously developed. The capacitance model assumes quasi-statical operation and is valid at medium frequencies. Frequency dispersion effects will be incorporated to this model in the near future.
机译:我们介绍了紧凑的OTFT电荷和电容模型,并提供了终端电荷和跨电容的解析表达式。这些模型是基于物理的,并且与先前开发的通道电流模型一致。电容模型假定为准静态操作,并且在中等频率下有效。频散效应将在不久的将来纳入该模型。

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