Dept. of Electron. Electr. Eng., Pohang Univ. of Sci. Technol., Pohang, South Korea;
III-V semiconductors; adjacent channel interference; broadband networks; code division multiple access; driver circuits; gallium compounds; power amplifiers; repeaters; wide band gap semiconductors; GaN; adaptively bias-controlled predistortion drivers; adjacent channel leakage ratio; asymmetrical Doherty power amplifiers; frequency 2.14 GHz; gain 26.5 dB; unequal saturation powers; wide-band code division multiple access repeater systems; Bias; Doherty power amplifier (DPA); drain efficiency; linearity; predistorti;
机译:宽带,高效GaN HEMT DOHERTY功率放大器的宽带数字预失真
机译:自适应波峰因数降低和自适应3G Doherty功率放大器线性化器设计的基带数字预失真
机译:联合Doherty放大器和数字调制器为移动高效线性功率放大器优化了每个分支的输入功率分配
机译:具有自适应偏置控制的预失真驱动因素的高度线性和高效的不对称Doherty功率放大器
机译:非线性嵌入用于高效RF功率放大器的设计及其在广义非对称doherty放大器中的应用
机译:用于功率放大器预失真实验的数字补偿宽带60 GHz试验台
机译:准备5G的线性度和效率:具有混合模式载波聚合的双频Doherty功率放大器的数字预失真