Design of a novel MEMS electric field sensor for detecting internal defect of non-ceramic insulators

摘要

This paper presented a novel MEMS electric field sensor (EFS) based on SOI fabrication process for detecting internal defect of non-ceramic insulators. The MEMS structure is designed to work at resonant frequency for maximum sensitivity to electric fields. Prototyped by the SOI fabrication process,the device gives a higher quality factor (Q) of approximately 30000 at a vacuum degree of ～1mTorr with lower actuation voltages (i.e., 250mV DC and 20mVp-p) than other reported electrostatic driven EFS. Tested in ambient air conditions, the device has a resolution better than 50V/m in a measured range of 0-6.8kV/m 50Hz AC electric field with current sensor designs.